2SB075030MLJL Datasheet, PDF (1/1 Pages) Silan Microelectronics Joint-stock – SCHOTTKY BARRIER DIODE CHIPS

2SB075030MLJL
2SB075030MLJL SCHOTTKY BARRIER DIODE CHIPS
DESCRIPTION
¾ 2SB075030MLJL is a schottky barrier diode chips
fabricated in silicon epitaxial planar technology;
¾ Low power losses, high efficiency;
¾ Guard ring construction for transient protection;
¾ Low forward voltage drop;
¾ High ESD capability;
¾ High surge capability;
¾ Packaged products are widely used in switching
power suppliers, polarity protection circuits and
other electronic circuits.;
¾ Chip Size:750μm X 750μm;
¾ Chip Thickness: 210±20μm;
Chip Topography and Dimensions
La: Chip Size: 750μm;
Lb: Pad Size: 655μm;
ORDERING SPECIFICATIONS
Product Name
2SB075030MLJL
Specification
For Au and AlSi wire bonding package
ABSOLUTE MAXIMUM RATINGS
Parameters
Maximum Repetitive Peak Reverse Voltage
Average Forward Rectified Current
Peak Forward Surge Current@8.3ms
Maximum Operation Junction Temperature
Storage Temperature Range
Symbol
VRRM
IFAV
IFSM
TJ
TSTG
Ratings
30
1.0
5.5
125
-40~125
ELECTRICAL CHARACTERISTICS (Tamb=25°C)
Parameters
Reverse Voltage
Forward Voltage
Reverse Current
Symbol
VBR
VF1
VF2
IR
Test Conditions
IR=100μA
IF=0.7A
IF=1.0A
VR=30V
Min.
30
--
--
--
Max.
--
0.45
0.5
60
Unit
V
A
A
°C
°C
Unit
V
V
V
μA
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.0
2008.07.28
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