2SB065020MTJY Datasheet, PDF (1/1 Pages) Silan Microelectronics Joint-stock – SCHOTTKY BARRIER DIODE CHIPS

2SB065020MTJY
2SB065020MTJY SCHOTTKY BARRIER DIODE CHIPS
DESCRIPTION
Ø 2SB065020MTJY is a schottky barrier diode chips
fabricated in silicon epitaxial planar technology;
Ø Low power losses, high efficiency;
Ø Guard ring construction for transient protection;
Ø Low forward voltage drop;
Ø High ESD capability;
Ø High surge capability;
Ø Packaged products are widely used in switching
power suppliers, polarity protection circuits and
other electronic circuits;
Ø Chip Size:650µm X 650µm;
Ø Chip Thickness: 155±20um
Ø Gross die:26000 Die/Wafer(5 inch)
Chip Topography and Dimensions
La: Chip Size: 650µm;
Lb: Pad Size: 580µm;
ORDERING SPECIFICATIONS
Product Name
2SB065020MTJY
Specification
For Au and AlSi wire bonding
package
ABSOLUTE MAXIMUM RATINGS
Parameters
Maximum Repetitive Peak Reverse Voltage
Average Forward Rectified Current
Peak Forward Surge Current@8.3ms
Maximum Operation Junction Temperature
Storage Temperature Range
Symbol
VRRM
IFAV
IFSM
TJ
TSTG
Ratings
20
0.5
5.5
125
-40~125
Unit
V
A
A
°C
°C
ELECTRICAL CHARACTERISTICS (Tamb=25°C)
Parameters
Reverse Voltage
Forward Voltage
Reverse Current
Symbol
VBR
VF1
VF2
IR1
IR2
Test Conditions
IR=250µA
IF=100mA
IF=500mA
VR=10V
VR=20V
Min.
Max.
Unit
20
--
V
--
0.30
V
--
0.385
V
--
75
µA
250
µA
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http: www.silan.com.cn
REV:1.0 2007.10.24
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