2SB035030MLJY Datasheet, PDF (1/1 Pages) Silan Microelectronics Joint-stock – 2SB035030MLJY SCHOTTKY BARRIER DIODE CHIPS

2SB035030MLJY
2SB035030MLJY SCHOTTKY BARRIER DIODE CHIPS
DESCRIPTION
Ø 2SB035030MLJY is a schottky barrier diode chips
fabricated in silicon epitaxial planar technology;
Ø Low power losses, high efficiency;
Ø Guard ring construction for transient protection;
Ø High ESD capability;
Ø High surge capability;
Ø Packaged products are widely used in switching
power suppliers, polarity protection circuits and
other electronic circuits;
Ø Chip Size:350µm X 350µm;
Ø Chip Thickness: 155±20µm
Chip Topography and Dimensions
La: Chip Size: 350µm;
Lb: Pad Size: 300µm;
ORDERING SPECIFICATIONS
Product Name
2SB035030MLJY
Specification
For Au and AlSi wire bonding
package
ABSOLUTE MAXIMUM RATINGS
Parameters
Maximum Repetitive Peak Reverse Voltage
Average Forward Rectified Current
Peak Forward Surge Current@8.3ms
Maximum Operation Junction Temperature
Storage Temperature Range
Symbol
VRRM
IFAV
IFSM
TJ
TSTG
Ratings
30
200
1
125
-40~125
Unit
V
mA
A
°C
°C
ELECTRICAL CHARACTERISTICS (Tamb=25°C)
Parameters
Reverse Voltage
Forward Voltage
Reverse Current
Symbol
VBR
VF
IR
Test Conditions
IR=0.1mA
IF=200mA
VR=10V
Min.
30
--
--
Max.
--
0.50
30
Unit
V
V
µA
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http: www.silan.com.cn
REV:1.0 2007.09.18
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