2SB030070MLJY Datasheet, PDF (1/1 Pages) Silan Microelectronics Joint-stock – 2SB030070MLJY SCHOTTKY BARRIER DIODE CHIPS

2SB030070MLJY
2SB030070MLJY SCHOTTKY BARRIER DIODE CHIPS
DESCRIPTION
Ø 2SB030070MLJY is a schottky barrier diode chips
fabricated in silicon epitaxial planar technology;
Ø Low power losses, high efficiency;
Ø Guard ring construction for transient protection;
Ø High ESD capability;
Ø High surge capability;
Ø Packaged products are widely used in switching
power suppliers, polarity protection circuits and
other electronic circuits;
Ø Chip Size:300µm X 300µm;
Ø Chip Thickness: 155±20µm
Chip Topography and Dimensions
La: Chip Size:300µm;
Lb: Pad Size: 150µm;
ORDERING SPECIFICATIONS
Product Name
2SB030070MLJY
Specification
For Au and AlSi wire bonding
package
ABSOLUTE MAXIMUM RATINGS
Parameters
Maximum Repetitive Peak Reverse Voltage
Average Forward Rectified Current
Peak Forward Surge Current@8.3ms
Maximum Operation Junction Temperature
Storage Temperature Range
Symbol
VRRM
IFAV
IFSM
TJ
TSTG
Ratings
70
70
1
125
-40~125
Unit
V
mA
A
°C
°C
ELECTRICAL CHARACTERISTICS (Tamb=25°C)
Parameters
Reverse Voltage
Forward Voltage
Reverse Current
Symbol
VBR
VF
IR
Test Conditions
IR=8µA
IF=1.0mA
IF=10mA
IF=15mA
VR=50V
VR=70V
Min.
70
--
--
Max.
--
0.40
0.71
0.95
0.08
8
Unit
V
V
µA
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http: www.silan.com.cn
REV:1.0 2007.10.15
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