2KG028075YQ Datasheet, PDF (1/1 Pages) Silan Microelectronics Joint-stock – SWITCHING DIODE CHIPS

2KG028075YQ
2KG028075YQ SWITCHING DIODE CHIPS
DESCRIPTION
Ø 2KG028075YQ is a high speed switching diode chip
fabricated in planar technology.
Ø This chip can be encapsulated as 1N4148 switching diode.
Ø When the chip is selected glass package, the chip thickness
is 120µm, and the top electrodes material is Ag bump, the
back-side electrodes material is Ag.
Ø Chip size: 0.28 X 0.28 (mm²).
2KG028XXX CHIP TOPOGRAPHY
2KG028075YQ ELECTRICAL CHARACTERISTICS (TJ=25°C)
Characteristics
Forward Voltage
Reverse voltage
Reverse Current
Diode Capacitance
Reverse Recovery Time
Symbol
Test Conditions
IF=10mA.
VF
IF=100mA.
VBR IB=100µA.
VR=20V.
IR
VR=75V.
Cd f=1MHz; VR=0.
When switched from IF=10mA to
trr VR=6V; RL=100Ω; measured at
IR=1mA.
Min.
--
0.62
100
--
--
--
Typ.
--
0.9
120
--
--
1.9
Max.
1.0
1.2
--
25
5
4
Unit
V
V
V
nA
µA
pF
--
--
4
ns
2KG028075YQ APPEARANCE(Top side material is Ag ball)
Parameter
Chip Size
Chip Thickness
Bump Diameter
Bump Height
Scribe Line Width
Chip Appearance Diagram
Symbol
D
C
A
B
/
Min.
240
100
190
60
--
Type
--
--
--
80
40
Max.
260
140
225
90
--
Unit
µm
µm
µm
µm
µm
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http: www.silan.com.cn
REV:1.0 2004.10.26
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