SI4X55-C Datasheet, PDF (9/39 Pages) Silicon Laboratories – Preamble sense mode

Si4x55-C
Table 6. Digital IO Specifications (GPIO_x, SCLK, SDO, SDI, nSEL, nIRQ)¹
Parameter
Rise Time^2,3
Fall Time^3,4
Input Capacitance
Logic High Level Input Voltage
Logic Low Level Input Voltage
Input Current
Input Current if Pullup is Activated
Drive Strength for Output Low
Level
Drive Strength for Output High
Level (GPIO1, GPIO2, GPIO3)
Drive Strength for Output High
Level (GPIO0)
Logic High Level Output Voltage
Logic Low Level Output Voltage
Symbol
T_RISE
T_FALL
C_IN
V_IH
V_IL
I_IN
I_INP
I_OmaxLL
I_OmaxLH
I_OmaxHL
I_OmaxHH
I_OmaxLL
I_OmaxLH
I_OmaxHL
I_OmaxHH
I_OmaxLL
I_OmaxLH
I_OmaxHL
I_OmaxHH
V_OH
V_OL
Test Condition
0.1 x V_DD to 0.9 x V_DD,
C_L= 10 pF, DRV<1:0> = LL
V_DD = 3.3 V
0.9 x V_DD to 0.1 x V_DD,
C_L= 10 pF, DRV<1:0> = LL
V_DD = 3.3 V
0 < V_IN < V_DD
V_IL = 0 V
DRV[1:0] = LL³
DRV[1:0] = LH³
DRV[1:0] = HL³
DRV[1:0] = HH³
DRV[1:0] = LL³
DRV[1:0] = LH³
DRV[1:0] = HL³
DRV[1:0] = HH³
DRV[1:0] = LL³
DRV[1:0] = LH³
DRV[1:0] = HL³
DRV[1:0] = HH³
DRV[1:0] = HL³
DRV[1:0] = HL³
Min
—
—
—
V_DD x 0.7
—
–1
1
—
—
—
—
—
—
—
—
—
—
—
—
V_DD x 0.8
—
Typ
2.3
2
2
—
—
—
—
6.66
5.03
3.16
1.13
5.75
4.37
2.73
0.96
2.53
2.21
1.70
0.80
—
—
Max
—
—
—
—
V_DD x 0.3
1
4
—
—
—
—
—
—
—
—
—
—
—
—
—
V_DD x 0.2
Unit
ns
ns
pF
V
V
µA
µA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
V
V
Notes:
1. All minimum and maximum values are guaranteed across the recommended operating conditions of supply voltage and
from –40 to +85 °C unless otherwise stated. All typical values apply at VDD = 3.3 V and 25 °C unless otherwise stated.
2. 6.7 ns is typical for GPIO0 rise time.
3. Assuming VDD = 3.3 V, drive strength is specified at Voh (min) = 2.64 V and Vol (max) = 0.66 V at room temperature.
4. 2.4 ns is typical for GPIO0 fall time.
Rev 1.0
9