SI1145-M01 Datasheet, PDF (9/70 Pages) Silicon Laboratories – High reflectance sensitivity

Si1145/46/47-M01
Table 2. Performance Characteristics¹ (Continued)
Parameter
Symbol
Test Condition
Min Typ Max Unit
Large Infrared Photodi-
ode Noise
All gain settings
—
10
— ADC
counts
RMS
Visible Photodiode Offset
Drift
VIS_RANGE = 0
ALS_VIS_ADC_GAIN = 0
ALS_VIS_ADC_GAIN = 1
ALS_VIS_ADC_GAIN = 2
ALS_VIS_ADC_GAIN = 3
ALS_VIS_ADC_GAIN = 4
ALS_VIS_ADC_GAIN = 5
ALS_VIS_ADC_GAIN = 6
ALS_VIS_ADC_GAIN = 7
—
— ADC
–0.3
–0.11
counts/
°C
–0.06
–0.03
–0.01
–0.008
–0.007
–0.008
Small Infrared Photodiode
Offset Drift
IR_RANGE = 0
IR_GAIN = 0
IR_GAIN = 1
IR_GAIN = 2
IR_GAIN = 3
—
— ADC
–0.3
–0.06
counts/
°C
–0.03
–0.01
SCL, SDA, INT Output
V_OL
Low Voltage
I = 4 mA, V_DD > 2.0 V
I = 4 mA, V_DD < 2.0 V
—
— V_DDx0. V
—
—
2
V
0.4
Temperature Sensor Off-
set
25 °C
— 11136 — ADC
counts
Temperature Sensor Gain
—
35
— ADC
counts/
°C
Notes:
1. Unless specifically stated in "Conditions", electrical data assumes ambient light levels < 1 klx.
2. Proximity-detection performance may be degraded, especially when there is high optical crosstalk, if the LED supply
and voltage drop allow the driver to saturate and current regulation is lost.
3. Guaranteed by design and characterization.
4. Represents the time during which the device is drawing a current equal to I_active for power estimation purposes.
Assumes default settings.
Rev. 1.0
9