TS1109 Datasheet, PDF (8/20 Pages) Silicon Laboratories – Overcurrent and Undercurrent Detection

3. Electrical Characteristics
TS1109 Data Sheet
Electrical Characteristics
Table 3.1. Recommended Operating Conditions¹
Parameter
Symbol
Conditions
Min
Typ
Max
Units
System Specifications
Operating Voltage Range
VDD
1.7
—
5.25
V
Common-Mode Input Range
V_CM
V_RS+, Guaranteed by CMRR
2
—
27
V
Note:
1. All devices 100% production tested at T_A = +25 °C. Limits over Temperature are guaranteed by design and characterization.
Table 3.2. DC Characteristics¹
Parameter
Symbol
Conditions
Min
System Specifications
No Load Input Supply Current
I_RS+ + I_RS–
See Note 2
—
I_VDD
—
Current Sense Amplifier
Common Mode Rejection Ratio
CMRR
2 V < V_RS+ < 27 V
120
Input Offset Voltage (See Note 3)
V_OS
T_A = +25 °C
—
–40 °C < T_A < +85 °C
—
V_OS Hysteresis (See Note 4)
V_HYS
T_A = +25 °C
—
Gain
G
TS1109-20
—
TS1109-200
—
Positive Gain Error (See Note 5)
GE+
T_A = +25 °C
—
–40 °C < T_A < +85 °C
—
Negative Gain Error (See Note 5)
GE–
T_A = +25 °C
—
–40 °C < T_A < +85 °C
—
Gain Match (See Note 5)
GM
T_A = +25 °C
—
–40 °C < T_A < +85 °C
—
Transfer Resistance
R_OUT
From FILT to OUT
28
CSA Buffer
Input Bias Current
I_{Buffer_BIAS}
–40 °C < T_A < +85 °C
—
Input referred DC Offset
V_{Buffer_OS}
—
Offset Drift
TCV_{Buffer_OS}
–40 °C < T_A < +85 °C
—
Input Common Mode Range
V_{Buffer_CM}
–40C < T_A < +85 °C
0.2
Output Range
V_OUT(min,max)
I_OUT = ±150 µA
0.2
Sign Comparator Parameters
Typ
Max
Units
0.68
1.2
µA
0.76
1.3
µA
130
—
dB
±100
±150
µV
—
±200
µV
10
—
µV
20
—
V/V
200
—
±0.1
±0.6
%
—
±1
%
±0.6
±1
%
—
±1.4
%
±0.6
±1
%
—
±1.4
%
40
52.8
kΩ
0.3
—
nA
—
±2.5
mV
0.6
—
µV/°C
—
VDD – 0.2
V
—
VDD – 0.2
V
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