GSM850 Datasheet, PDF (5/38 Pages) Silicon Laboratories – Single 8x8 mm package CMOS process technology Intergrated GSM/GPRS transceiver including

Aero I
Table 3. DC Characteristics
(V_DD = 2.7 to 3.0 V, T_A = –20 to 85 °C)
Parameter
Symbol Test Condition
Min
Typ
Max Unit
Supply Current¹
I_RX
Receive mode
—
80
111
mA
I_TX
Transmit mode
—
82
107
mA
I_XOUT
PDN = 0, XEN = 1
—
1
2
mA
High Level Input Voltage²
Low Level Input Voltage²
High Level Input Current²
Low Level Input Current²
High Level Output Voltage³
Low Level Output Voltage³
High Level Output Voltage⁴
Low Level Output Voltage⁴
I_PDN
PDN = 0, XEN = 0,
—
5
80
µA
XBUF = 0, XPD1 = 1
V_IH
0.7 V_DD
—
—
V
V_IL
—
—
0.3 V_DD
V
I_IH
V_IH = V_DD = 3.0 V
–10
—
10
µA
I_IL
V_IL = 0 V,
–10
—
10
µA
V_DD = 3.0 V
V_OH
I_OH = –500 µA
V_DD–0.4 —
—
V
V_OL
I_OL = 500 µA
—
—
0.4
V
V_OH
I_OH = –10 mA
V_DD–0.4 —
—
V
V_OL
I_OL = 10 mA
—
—
0.4
V
Notes:
1. Measured with load on XOUT pin of 10 pF and f_REF = 13 MHz. Limits with XEN = 1 guaranteed by characterization.
2. For pins SCLK, SDI, SEN, XEN, and PDN.
3. For pins SDO, XOUT.
4. For pins DIAG1, DIAG2.
Rev. 1.0
5