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SI1120_10 Datasheet, PDF (4/20 Pages) Silicon Laboratories – PROXIMITY/AMBIENT LIGHT SENSOR WITH PWM OUTPUT
Si1120
1. Electrical Specifications
Table 1. Absolute Maximum Ratings*
Parameter
Conditions
Min
Typ
Max
Units
Supply Voltage
–0.3
—
5.5
V
Operating Temperature
–40
—
85
°C
Storage Temperature
–65
—
85
°C
Voltage on TXO with respect to
GND
–0.3
—
5.5
V
Voltage on all other Pins with
respect to GND
–0.3
—
VDD + 0.3
V
Maximum Total Current through
TXO (TXO active)
—
—
500
mA
Maximum Total Current through
TXGD and VSS
—
—
600
mA
Maximum Total Current through
all other Pins
—
—
100
mA
ESD Rating
Human body model
—
—
2
kV
*Note: Stresses above those listed in this table may cause permanent damage to the device. This is a stress rating only, and
functional operation of the devices at those or any other conditions above those indicated in the operational listings of
this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device
reliability.
Table 2. Recommended Operating Conditions
Parameter
Symbol
Conditions / Notes
Min Typ Max Units
Typical Operating Conditions (TA = 25 °C)
Supply Voltage
Operating Temperature
VDD
T = –40 to +85 °C,
VDD to GND, TXGD
2.2
3.3 3.7
V
–40
25 85
°C
SC/MD/STX High Threshold
VIH
SC/MD/STX Low Threshold
VIL
Active TXO Voltage1
VDD–0.7 — —
V
—
— 0.6
V
—
— 1.0
V
ALS Operating Range
Edc
Proximity Conversion Frequency2
LED Emission Wavelength3
—
— 100 kLx
—
125 250
Hz
600 850 950 nm
Notes:
1. Minimum R1 resistance should be calculated based on LED forward voltage, maximum LED current, LED voltage rail
used, and maximum active TXO voltage.
2. When in Mode 0 and operating at 250 Hz, STX pulse width should be limited to 1 ms.
3. When using LEDs near the min and max wavelength limits, higher radiant intensities may be needed to achieve the end
system's proximity sensing performance goals.
4
Rev. 1.0