EFM32LG330 Datasheet, PDF (29/66 Pages) Silicon Laboratories – High Performance 32-bit processor up to 48 MHz memory Protection Unit

Preliminary
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Symbol
Parameter
Condition
Min
Typ
Max
Unit
1 MSamples/s, 12 bit, single
ended, internal 2.5V refer-
ence
76
dBc
1 MSamples/s, 12 bit, single
ended, V_DD reference
1 MSamples/s, 12 bit, differ-
ential, internal 1.25V refer-
ence
73
dBc
66
dBc
1 MSamples/s, 12 bit, differ-
ential, internal 2.5V reference
77
dBc
1 MSamples/s, 12 bit, differ-
ential, V_DD reference
1 MSamples/s, 12 bit, differ-
ential, 2xV_DD reference
1 MSamples/s, 12 bit, differ-
ential, 5V reference
76
dBc
75
dBc
69
dBc
200 kSamples/s, 12 bit, sin-
gle ended, internal 1.25V ref-
erence
75
dBc
200 kSamples/s, 12 bit, sin-
gle ended, internal 2.5V refer-
ence
75
dBc
200 kSamples/s, 12 bit, single
ended, V_DD reference
200 kSamples/s, 12 bit, dif-
ferential, internal 1.25V refer-
ence
76
dBc
79
dBc
200 kSamples/s, 12 bit, differ-
ential, internal 2.5V reference
79
dBc
200 kSamples/s, 12 bit, differ-
ential, 5V reference
78
dBc
V_ADCOFFSET Offset voltage
200 kSamples/s, 12 bit, differ-
ential, V_DD reference
200 kSamples/s, 12 bit, differ-
ential, 2xV_DD reference
After calibration, single ended
After calibration, differential
79
dBc
79
dBc
0.3
mV
0.3
mV
TGRAD_ADCTH
Thermometer output gradi-
ent
-1.92
-6.3
mV/°C
ADC
Codes/
°C
DNL_ADC
Differential non-linearity
(DNL)
±0.7
LSB
INL_ADC
MC_ADC
GAIN_ED
Integral non-linearity (INL),
End point method
No missing codes
Gain error drift
1.25V reference
2.5V reference
11.999¹
±1.2
12
0.01²
0.01²
LSB
bits
0.033³ %/°C
0.03³ %/°C
2013-06-28 - EFM32LG330FXX - d0110_Rev1.10
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