EFM32GG890 Datasheet, PDF (23/81 Pages) Silicon Laboratories – Read-while-write support

3.9.2 HFXO
Table 3.10. HFXO
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Symbol
f_HFXO
ESR_HFXO
g_mHFXO
C_HFXOL
DC_HFXO
I_HFXO
t_HFXO
Parameter
Condition
Min
Supported nominal
crystal Frequency
Supported crystal
equivalent series re-
sistance (ESR)
Crystal frequency 48 MHz
Crystal frequency 32 MHz
Crystal frequency 4 MHz
The transconduc-
tance of the HFXO
input transistor at
crystal startup
HFXOBOOST in CMU_CTRL
equals 0b11
Supported crystal
external load range
Duty cycle
Current consump-
tion for HFXO after
startup
4 MHz: ESR=400 Ohm,
C_L=20 pF, HFXOBOOST in
CMU_CTRL equals 0b11
32 MHz: ESR=30 Ohm,
C_L=10 pF, HFXOBOOST in
CMU_CTRL equals 0b11
Startup time
32 MHz: ESR=30 Ohm,
C_L=10 pF, HFXOBOOST in
CMU_CTRL equals 0b11
Typ
4
20
5
46
Max
Unit
48 MHz
50 Ohm
30
60 Ohm
400
1500 Ohm
mS
25 pF
50
54 %
85
µA
165
µA
400
µs
3.9.3 LFRCO
Table 3.11. LFRCO
Symbol
Parameter
Condition
f_LFRCO
t_LFRCO
Oscillation frequen-
cy , V_DD= 3.0 V,
T_AMB=25°C
Startup time not in-
cluding software
calibration
I_LFRCO
Current consump-
tion
TUNESTEP_L- Frequency step
FRCO
for LSB change in
TUNING value
Min
Typ
Max
Unit
31.29
32.768
34.28 kHz
150
µs
300
nA
1.5
%
2014-05-23 - EFM32GG890FXX - d0043_Rev1.30
23
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