EFM32WG880 Datasheet, PDF (20/85 Pages) Silicon Laboratories – Operation from backup battery when main power drains out

Symbol
I_IOLEAK
R_PU
R_PD
R_IOESD
t_IOGLITCH
t_IOOF
V_IOHYST
...the world's most energy friendly microcontrollers
Parameter
Condition
Min
Typ
Sinking 20 mA, V_DD=3.0 V,
GPIO_Px_CTRL DRIVEMODE
= HIGH
Input leakage cur- High Impedance IO connected
rent
to GROUND or Vdd
I/O pin pull-up resis-
tor
I/O pin pull-down re-
sistor
Internal ESD series
resistor
Pulse width of puls-
10
es to be removed
by the glitch sup-
pression filter
Output fall time
I/O pin hysteresis
(V_IOTHR+ - V_IOTHR-)
GPIO_Px_CTRL DRIVEMODE
= LOWEST and load capaci-
tance C_L=12.5-25pF.
GPIO_Px_CTRL DRIVEMODE
= LOW and load capacitance
C_L=350-600pF
V_DD = 1.98 - 3.8 V
20+0.1C_L
20+0.1C_L
0.10V_DD
Max
Unit
0.25V_DD V
±0.1
±100 nA
40
kOhm
40
kOhm
200
Ohm
50 ns
250 ns
250 ns
V
2014-06-13 - EFM32WG880FXX - d0197_Rev1.40
20
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