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EM358X Datasheet, PDF (15/59 Pages) Silicon Laboratories – High-Performance, Integrated ZigBee/802.15.4 System-on-Chip Family | |||
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EM358x
Table 3.4. DC Characteristics (Continued)
Parameter
Test Condition
Min Typ Max Unit
Reset Current
Quiescent current, nRESET
asserted
Typ at 25 °C/3.0 V
Max at 85 °C/3.6 V
â
2
3
mA
Processor and Peripheral Currents
ARM® CortexTM-M3, RAM, and
25 °C, 1.8 V memory and
â
7.5
â
mA
flash memory
1.25 V core
ARM® CortexTM-M3 running at 12 MHz
from crystal oscillator
Radio and all peripherals off
ARM® CortexTM-M3, RAM, and
25 °C, 1.8 V memory and
â
8.5
â
mA
flash memory
1.25 V core
ARM® CortexTM-M3 running at 24 MHz
from crystal oscillator
Radio and all peripherals off
ARM® CortexTM-M3, RAM, and
25 °C, 1.8 V memory and
â
4.0
â
mA
flash memory sleep current
1.25 V core
ARM® CortexTM-M3 sleeping, CPU
clock set to 12 MHz from the crystal
oscillator
Radio and all peripherals off
ARM® CortexTM-M3, RAM, and
25 °C, 1.8 V memory and
â
2.5
â
mA
flash memory sleep current
1.25 V core
ARM® CortexTM-M3 sleeping, CPU
clock set to 6 MHz from the high fre-
quency RC oscillator
Radio and all peripherals off
Serial controller current
For each controller at maximum data â
0.2
â
mA
rate
General purpose timer current
For each timer at maximum clock rate â 0.25 â
mA
General purpose ADC current
At maximum sample rate, DMA enabled â
1.1
â
mA
USB active current
1
mA
USB suspended mode current
1.8 V memory and 1.25 V core
ARM® CortexTM-M3 sleeping, CPU
clock set to 3 MHz from the high fre-
quency RC oscillator.
Radio and all peripherals off
2.5
mA
RX Current
Radio receiver, MAC, and base-
ARM® CortexTM-M3 sleeping, CPU
â 23.5 â
mA
band
clock set to 12 MHz
Total RX current ( = IRadio receiver,
25 °C, VDD_PADS=3.0 V
â 27.0 â
mA
MAC and baseband, CPU + IRAM, ARM® CortexTM-M3 running at 12 MHz
and Flash memory )
25 °C, VDD_PADS=3.0 V
â 28.0 â
mA
ARM® CortexTM-M3 running at 24 MHz
Rev 1.0
15
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