RD-0002-0201 Datasheet, PDF (14/59 Pages) Silicon Laboratories – High-Performance, Integrated ZigBee/802.15.4 System-on-Chip Family

EM358x
3.3. Environmental Characteristics
Table 3.3 lists the rated environmental characteristics of the EM358x.
Table 3.3. Environmental Characteristics
Parameter
ESD (human body model)
ESD (charged device model)
ESD (charged device model)
Test Condition
On any pin
Non-RF pins
RF pins
Min Typ Max Unit
—
—
±2
kV
—
— ±400
V
—
— ±225
V
3.4. DC Electrical Characteristics
Table 3.4 lists the DC electrical characteristics of the EM358x.
Table 3.4. DC Characteristics
Parameter
Regulator input voltage
(VDD_PADS)
Power supply range (VDD_MEM)
Power supply range (VDD_CORE)
Deep Sleep Current
Quiescent current, internal oscilla-
tor disabled, 4 kB RAM retained
Quiescent current, including 
internal RC oscillator, 4 kB RAM
retained
Quiescent current, including
32.768 kHz oscillator, 4 kB RAM
retained
Quiescent current, including 
internal RC oscillator and
32.768 kHz oscillator, 4 kB RAM
retained
Additional quiescent current per 
4 kB block of RAM retained
Additional quiescent current when
retained RAM exceeds 32 kB
Simulated deep sleep (debug
mode) current
Test Condition
Regulator output or external input
Regulator output
–40 °C, VDD_PADS=3.6 V
+25 °C, VDD_PADS=3.6 V
+85 °C, VDD_PADS=3.6 V
–40 °C, VDD_PADS=3.6 V
+25 °C, VDD_PADS=3.6 V
+85°C, VDD_PADS=3.6 V
–40 °C, VDD_PADS=3.6 V
+25 °C, VDD_PADS=3.6 V
+85 °C, VDD_PADS=3.6 V
–40 °C, VDD_PADS=3.6 V
+25 °C, VDD_PADS=3.6 V
+85 °C, VDD_PADS=3.6 V
–40 °C, VDD_PADS=3.6 V
+25 °C, VDD_PADS=3.6 V
+85 °C, VDD_PADS=3.6 V
–40 °C, VDD_PADS=3.6 V
+25 °C, VDD_PADS=3.6 V
+85 °C, VDD_PADS=3.6 V
With no debugger activity
Min Typ Max Unit
2.1
—
3.6
V
1.7 1.8 1.9
V
1.18 1.25 1.32
V
—
0.9
—
A
—
1.0
—
A
—
2.2
—
A
—
1.2
—
A
— 1.25 —
A
—
2.5
—
A
—
1.3
—
A
—
1.6
—
A
—
2.9
—
A
—
1.6
—
A
—
1.9
—
A
—
3.2
—
A
— 0.007 —
A
— 0.067 —
A
— 0.76 —
A
— 0.57 —
A
— 0.67 —
A
—
2.0
—
A
—
500
—
A
14
Rev 1.0