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EZR32WG330F64R Datasheet, PDF (13/87 Pages) Silicon Laboratories – EZR32WG Wireless MCUs EZR32WG330 Data Sheet | |||
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4.3 Thermal Characteristics
EZR32WG330 Data Sheet
Electrical Specifications
Table 4.2. Thermal Conditions
Parameter
Symbol
Test Condi-
Min
Typ
Max
Unit
tion
Ambient temperature range
TAMB
-40
â
85
°C
Junction temperature value
TJ
â
â
1051
°C
+13/+16 dBm
â
on 2-layer
Thermal impedance junction to
ambient
TIJA
board
+20 dBm on 4-
â
layer board
â
61.8
°C/W
â
20.72
°C/W
Storage temperature range
TSTG
-55
â
150
°C
Note:
1. Values are based on simulations run on 2 layer and 4 layer PCBs at 0m/s airflow.
2. Based on programmed devices tested for 10000 hours at 150 ºC. Storage temperature affects retention of preprogrammed cali-
bration values stored in flash. Please refer to the Flash section in the Electrical Characteristics for information on flash data reten-
tion for different temperatures.
4.4 General Operating Conditions
Table 4.3. General Operating Conditions
Parameter
Symbol
Min
Typ
Max
Ambient temperature range
TAMB
-40
â
85
Operating supply voltage
VDDOP
1.98
â
3.8
Internal APB clock frequency
fAPB
â
â
48
Internal AHB clock frequency
fAHB
â
â
48
Table 4.4. Environmental
Parameter
Symbol
Test Condi-
Min
tion
ESD (Human Body Model HBM) VESDHBM
TAMB=25 °C
â
ESD (Charged Device Model,
VESDCDM
TAMB=25 °C
â
CDM)
Typ
Max
â
2000
â
500
Latch-up sensitivity passed: ±100 mA/1.5 à VSUPPLY(max) according to JEDEC JESD 78 method Class II, 85 °C.
Unit
°C
V
MHz
MHz
Unit
V
V
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