S-8351A50MC-J3JT2G Datasheet, PDF (35/51 Pages) Seiko Instruments Inc – STEP-UP, BUILT-IN / EXTERNAL FET PFM CONTROL SWITCHING REGULATOR / SWITCHING REGULATOR CONTROLLER

STEP-UP, BUILT-IN / EXTERNAL FET PFM CONTROL SWITCHING REGULATOR / SWITCHING REGULATOR CONTROLLER
Rev.3.0_00
S-8351/8352 Series
„ Reference Data
Use this reference data to choose the external parts. This reference data makes it possible to choose the
recommended external part based on the application and characteristics data.
1. External Parts for Reference Data
Table 18
Condition
1
2
3
4
5
6
7
8
9
10
11
12
Product Name
S-8351A30MC
S-8351A30MC
S-8351A30MC
S-8351A50MC
S-8351A50MC
S-8351A50MC
S-8352A30MC
S-8352A30MC
S-8352A30MC
S-8352A50MC
S-8352A50MC
S-8352A50MC
Output
Voltage
V
3.0
3.0
3.0
5.0
5.0
5.0
3.0
3.0
3.0
5.0
5.0
5.0
Power
Coil
MOS FET
Built-in
Built-in
Built-in
Built-in
Built-in
Built-in
External
External
External
External
External
External
CDRH6D28-470
CDRH6D28-101
CXLP120-101
CDRH6D28-101
CDRH125-221
CXLP120-470
CDRH6D28-220
CDRH6D28-101
CXLP120-470
CDRH6D28-220
CDRH6D28-101
CXLP120-101
The properties of the external parts are shown below.
Table 19 Evaluation coil
Part
Product Name
Manufacturer
CDRH6D28-220 Sumida Corporation
CDRH6D28-470 Sumida Corporation
Coil
CDRH6D28-101 Sumida Corporation
CDRH125-221 Sumida Corporation
CXLP120-470 Sumitomo Special Metals Co., Ltd
CXLP120-101 Sumitomo Special Metals Co., Ltd
*1. Direct current resistance
*2. Maximum allowable current
Characteristics
22 μH, DCR ^*1 = 0.128 Ω, I_MAX ^*2 = 1200 mA
47 μH, DCR ^*1 = 0.238 Ω, I_MAX ^*2 = 800 mA
100 μH, DCR ^*1 = 0.535 Ω, I_MAX ^*2 = 540 mA
220 μH, DCR ^*1 = 0.4 Ω, I_MAX ^*2 = 800 mA
47 μH, DCR ^*1 = 0.95 Ω, I_MAX ^*2 = 450 mA
100 μH, DCR ^*1 = 2.5 Ω, I_MAX ^*2 = 200 mA
Table 20 Properties of External Parts
Part
Product Name
Manufacturer
Characteristics
Diode
MA2Z748
Matsushita Electronic Components V_F^*1 = 0.4V, I_F^*2 = 0.3A
Co., Ltd.
(Shottky type)
Capacitor
(Output
F93
capacitance)
Transistor
(NPN)
CPH3210
Nichicon Corporation
Sanyo Electric Co.,Ltd.
16V, 47μF
(Tantalum type)
V_CBO^*3 = 40V, V_CEO^*4 = 30V
hFE^*5 = 200 min. (V_CE = 2V, I_C = 500mA)
fT^*6 = 290 MHz typ. (V_CE = 10V, I_C = 500mA)
*1. Forward voltage, *2. Forward current, *3. Collector-to-base voltage, *4. Collector-to-emitter voltage, *5. DC
current gain, *6. Gain-bandwidth product
Caution The above values shown in the characteristics column of Table 19 and 20 are based on the
materials provided by each manufacture. However, consider the characteristics of the original
materials when using the above products.
Seiko Instruments Inc.
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