S-8240BAA-I6T1U Datasheet, PDF (21/37 Pages) Seiko Instruments Inc – BATTERY PROTECTION IC FOR 1-CELL PACK

Rev.1.0_00
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8240B Series
 Battery Protection IC Connection Example
EB+
R1
VDD
Battery C1
S-8240B Series
VSS
DO
CO
VM
R2
FET1
FET2
EB−
Figure 15
Table 11 Constants for External Components
Symbol Part
Purpose
Min.
Typ.
Max.
Remark
FET1
N-channel
MOS FET
Discharge control
−
−
−
Threshold voltage ≤ Overdischarge
detection voltage^*1
FET2
N-channel
MOS FET
Charge control
−
−
−
Threshold voltage ≤ Overdischarge
detection voltage^*1
R1
Resistor
ESD protection,
For power fluctuation
270 Ω 330 Ω 1 kΩ
−
C1
Capacitor For power fluctuation
0.068 μF 0.1 μF
1.0 μF
Caution should be exercised when setting
V_DIOV ≤ 20 mV, V_CIOV ≥ −20 mV.^*2
ESD protection,
Caution should be exercised when
R2
Resistor Protection for reverse
300 Ω 470 Ω 4 kΩ an FET with a large gate capacitance is
connection of a charger
used.^*3
*1. If an FET with a threshold voltage equal to or higher than the overdischarge detection voltage is used, discharging may be
stopped before overdischarge is detected.
*2. When setting V_DIOV ≤ 20 mV, V_CIOV ≥ −20 mV for power fluctuation protection, the condition of R1 × C1 ≥ 47 μF • Ω should
be met.
*3. If an FET with a gate capacitance equal to or more than 5 nF is used, charge overcurrent detection voltage may become
lower when R2 resistance is large. R2 resistance should be set to a smaller value when an FET with a gate capacitance
equal to or more than 5 nF is used.
Caution 1. The above constants may be changed without notice.
2. It has not been confirmed whether the operation is normal or not in circuits other than the above example
of connection. In addition, the example of connection shown above and the constant do not guarantee
proper operation. Perform thorough evaluation using the actual application to set the constant.
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