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S1000 Datasheet, PDF (10/38 Pages) Seiko Instruments Inc – ULTRA-SMALL PACKAGE HIGH-PRECISION | |||
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ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-1000 Series
Rev.3.1_00
2. CMOS output products
Table 10
(Ta = 25 °C unless otherwise specified)
Item
Symbol
Condition
Measure-
Min. Typ. Max. Unit ment
circuit
Detection voltage*1
Hysteresis width
âVDET
VHYS
â
âVDET(S) âVDET(S) âVDET(S)
Ã0.99
Ã1.01
V
1
â
âVDET
Ã0.03
âVDET
Ã0.05
âVDET
Ã0.07
V
1
Current consumption
ISS
VDD = âVDET(S)+ 1.5 V S-1000C15 to 39 â
VDD = 5.5 V
S-1000C40 to 46 â
350 900 nA
2
350 900 nA
2
Operating voltage
VDD
â
0.95
â
5.5 V
1
Output current
Output transistor,
IOUT
Nch, VDS = 0.5 V, VDD = 1.2 V
Output transistor,
Pch, VDS = 0.5 V, VDD = 5.5 V
1.36 2.55
â mA
3
1.71 2.76
â mA
4
Response time
tPLH
â
â
â
60 μs
1
Detection voltage
ÎâVDET
temperature coefficient*2 ÎTaâ¢âVDET
Ta = â40 to +85 °C
â
±100
±350
ppm/
°C
1
*1. âVDET: Actual detection voltage value, âVDET(S): Specified detection voltage value (The center value of the detection voltage
range in Table 2.)
*2. The temperature change ratio in the detection voltage [mV / °C] is calculated by using the following equation.
[ ] [ ] [ ] Î â VDET
ÎTa
mV / °C *1 = ( ) âVDET(S) Typ.
V
*2
Ã
Î â VDET
ÎTa ⢠âVDET
ppm / °C *3 ÷ 1000
*1. Temperature change ratio of the detection voltage
*2. Specified detection voltage
*3. Detection voltage temperature coefficient
10
Seiko Instruments Inc.
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