SG2016CAN Datasheet, PDF (1/2 Pages) Seiko Instruments Inc – CRYSTAL OSCILLATOR (SPXO)

Crystal oscillator
CRYSTAL OSCILLATOR (SPXO)
OUTPUT : CMOS
SG2016CAN
•Frequency range
: 1.2 MHz to 75 MHz
•Supply voltage
: 1.8 V to 3.3 V Typ.
•Function
: Standby( ST )
•External dimensions : 2.0 × 1.6 × 0.7 mm
•Operation temperature : -40 to +105 °C
Actual size
Product Number (please contact us)
X1G004801xxxx00
Specifications (characteristics)
Item
Output frequency range
Supply voltage
Storage temperature
Symbol
f0
VCC
T_stg
Operating temperature
T_use
Frequency tolerance
Current consumption
Stand-by current
Symmetry
Output voltage
Output load condition
Input voltage
Rise time and Fall time
Start-up time
Frequency aging
f_tol
ICC
I_std
SYM
VOH
VOL
L_CMOS
VIH
VIL
tr/ tf
t_str
f_aging
Specifications
1.2 MHz to 75 MHz
1.60 V to 3.63 V
-55 °C to +125 °C
B: -20 °C to +70 °C
G: -40 °C to +85 °C
H: -40 °C to +105 °C
J: ±50 × 10^-6
L: ±100 × 10^-6
3.0 mA Max.
2.7 µA Max.
45 % to 55 %
VCC - 0.4 V Min.
0.4 V Max.
15 pF Max.
80 % VCC Min.
20 % VCC Max.
4 ns Max.
3 ms Max.
±3 × 10^-6 / year Max.
Conditions / Remarks
Please contact us about available frequencies.
See of figure ※1
Storage as single product.
See of figure ※1
No load condition Maximum frequency.
ST =GND
50 % VCC level , L_CMOS ≤ 15 pF
ST terminal
20 % VCC to 80 % VCC level , L_CMOS=15 pF
t=0 at 90 %
+25 °C, First year
Product Name
(Standard form)
SG2016CAN 25.000000MHz T J G A ( :Available code JB,JG,JH,LG,LH)
Model Name Frequency
Standard Specification A
℃
Supply voltage
T 1.8 to 3.3 V Typ.
K 2.5 to 3.3 V Typ.
Frequency tolerance
J ±50 × 10^-6
L ±100 × 10^-6
Operating temperature
B -20 °C to +70 °C
G -40 °C to +85 °C
H -40 °C to +105 °C
℃ 1 Maximum T_use of operating range
Vcc[V]
3.63
105
2.25
85
1.71
1.60
1.2
60
75 f0[MHz]
External dimensions
(Unit:mm)
Footprint (Recommended)
(Unit:mm)
Note.
ST pin = “H” or “open” : Specified frequency output.
ST pin = “L” : Output is high impedance, oscillation stops.
To maintain stable operation, provide a more than 0.01µF
by-pass capacitor at a location as near as possible to the power
source terminal of the crystal product (between Vcc - GND).