SE1020W Datasheet, PDF (1/7 Pages) SiGe Semiconductor, Inc. – 1.25 Gb/s Transimpedance Amplifier Product Preview

SE1020W
1.25 Gb/s Transimpedance Amplifier
Product Preview
Applications
Gigabit-Ethernet systems, test equipment
and modules
OC-24 fibre optic modules and line
termination
Fibre Channel optical systems
Features
Single +3.3 V power supply
Power dissipation = 110 mW (typ)
Input noise current = 180 nA rms when used
with a 0.7 pF detector
Transimpedance gain = 4.0 kΩ into a 50 Ω
load (differential)
On-chip automatic gain control gives input
current overload of 2.6 mA pk and max
output voltage swing of 300 mV pk-pk
Differential 50 Ω outputs
Bandwidth (-3 dB) = 1.2 GHz
Wide data rate range = 50 Mb/s to 1.25 Gb/s
Constant photodiode reverse bias voltage =
1.5 V (anode to input, cathode to VCC)
Minimal external components, supply
decoupling only
Operating junction temperature range =
-40°C to +125°C
Ordering Information
Type
SE1020W
Package
Bare Die
Remark
None
Functional Block Diagram
Product Description
SiGe Semiconductor offers a portfolio of optical
networking ICs for use in high-performance
optical transmitter and receiver functions, from
155 Mb/s up to 12.5 Gb/s.
SiGe Semiconductor’s SE1020W is a fully
integrated, silicon bipolar transimpedance
amplifier; providing wideband, low noise
preamplification of signal current from a
photodetector. It features differential outputs and
incorporates an automatic gain control
mechanism to increase dynamic range, allowing
input signals up to 2.6 mA peak. A decoupling
capacitor on the supply is the only external
circuitry required. A system block diagram is
shown after the functional description, on page 3.
SE1020
TzAmp
1.25 Gb/s
VCC or +ve supply
Automatic Gain Control
Integrator Rectifier
Input
Current
TZ_IN
Rf
Tz Amp
Bandgap
Reference
Output
Driver
50 Ω
50 Ω
OUTP
OUTN
42-DST-01 Rev 1.3 May 27/02
Confidential
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