PA2423G Datasheet, PDF (1/9 Pages) SiGe Semiconductor, Inc. – 2.4 GHz Bluetooth Class 1 Power Amplifier IC Preliminary Information

PA2423G
2.4 GHz Bluetooth Class 1 Power Amplifier IC
Preliminary Information
Applications
Bluetooth^tm Class 1
USB Dongles
Laptops
Access Points
Cordless Piconets
Flip chip and chip-on-board applications
Features
+22.5 dBm at 47% Power Added Efficiency
Low current 80 mA typical @ Pout=+20 dBm
Temperature stability better than 1dB
Power-control and Power-down modes
-40C to +85C temperature range
Gold bump bare die (0.63mm x 0.96mm)
Ordering Information
Part
PA2423G
PA2423G-EV
Package
Gold bump bare
die
Evaluation kit
Shipping
Method
Diced wafer
Waffle pack
Product Description
A monolithic, high-efficiency, silicon-germanium
power amplifier IC, the PA2423G is designed for
Class 1 Bluetooth^tm 2.4 GHz radio applications. It
delivers +22.5 dBm output power with 47% power-
added efficiency – making it capable of
overcoming insertion losses of up to 2.5 dB
between amplifier output and antenna input in
Class 1 Bluetooth^tm applications.
The amplifier features:
an analog control input for improving PAE at
reduced output power levels;
a digital control input for controlling power up
and power down modes of operation.
An on-chip ramping circuit corrects the turn-on/off
switching of amplifier output with less than 3 dB
overshoot, meeting the Bluetooth^tm specification 1.1.
The PA2423G operates at 3.3V DC. At typical
output power level (+22.5 dBm), its current
consumption is 120 mA.
The silicon/silicon-germanium structure of the
PA2423G provides high thermal conductivity and
a subsequently low junction temperature. This
device is capable of operating at a duty cycle of
100 percent.
Functional Block Diagram
IN
Stage 1
GND
V_CTL
Bias Generator
Interstage
Match
V_CC1
V_CC0 V_RAMP
Ramp
Circuitry
Stage 2
OUT/ V_CC2
GND
DOC # 05PDS003 Rev 5
07/26/2001
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