|
HYM64V1005GU-5 Datasheet, PDF (8/14 Pages) Siemens Semiconductor Group – 3.3V 1M x 64-Bit EDO-DRAM Module 3.3V 1M x 72-Bit EDO-DRAM Module | |||
|
◁ |
HYM 64(72)V1005GU-50/-60
1M x 64/72 DRAM Module
DC Characteristics (contdâ )
TA = 0 to 70 °C; VCC = 3.3 V ± 0.3 V
Parameter
Symbol
x 64
min. max.
Average VCC supply current:
ICC1
-50 version
-60 version
â
800
â
720
x 72
min. max.
â
940
â
840
Unit Note
s
mA 2) 3)
mA 4)
(RAS,CAS,address cycling, tRC=tRC min.)
Standby VCC supply current
ICC2
(RAS = CAS = VIH, one address change)
Average VCC supply current during RAS ICC3
only refresh cycles:
-50 version
-60 version
â
16
â
18 mA â
2) 4)
â
800
â
940 mA
â
720
â
840 mA
(RAS cycling, CAS = VIH , tRC = tRC min.)
Average VCC supply current during
ICC4
hyper page mode (EDO):
-50 version
-60 version
â
360
â
500 mA 2) 3)
â
300
â
420 mA 4)
(RAS = VIL, CAS, address cycling
tPC = tPC min.)
Standby VCC supply current
ICC5
(RAS = CAS = VCC â 0.2 V, one address
change)
Average VCC supply current during
ICC6
CAS-before-RAS refresh mode:
-50 version
-60 version
â
8
â
9 mA â
â
800
â
940 mA 2) 4)
â
720
â
840 mA
(RAS, CAS cycling, tRC = tRC min.)
Semiconductor Group
8
|
▷ |