HYM322035S Datasheet, PDF (8/10 Pages) Siemens Semiconductor Group – 2M x 32-Bit Dynamic RAM Module

HYM 322035S/GS-50/-60/-70
2M × 32-Bit EDO-Module
AC Characteristics (cont’d) ⁵⁾⁶⁾
16E
T_A = 0 to 70 °C,V_CC = 5 V ± 10 %, t_T = 2 ns
Parameter
Symbol
Limit Values
Unit Note
-50
-60
-70
min. max. min. max. min. max.
Early Write Cycle
Write command hold time
t_WCH
Write command pulse width
t_WP
Write command setup time
t_WCS
Write command to RAS lead time t_RWL
Write command to CAS lead time t_CWL
Data setup time
t_DS
Data hold time
t_DH
8
–
8
–
0
–
13 –
13 –
0
–
8
–
10 –
10 –
0
–
15 –
15 –
0
–
10 –
10 –
10 –
0
–
17 –
17 –
0
–
12 –
ns
ns
ns 15
ns
ns
ns 16
ns 16
Hyper Page Mode (EDO) Cycle
Hyper page mode (EDO) cycle t_HPC
20
time
CAS precharge time
t_CP
8
Access time from CAS precharge t_CPA
–
Output data hold time
t_COH
5
RAS pulse width in EDO mode t_RAS
50
CAS precharge to RAS Delay
t_RHPC 27
–
25
–
10
27 –
–
5
200k 60
–
32
–
30
–
10
32 –
–
5
200k 70
–
37
–
ns
–
ns
37 ns 7
–
ns
200k ns
–
ns
CAS-before-RAS Refresh Cycle
CAS setup time
t_CSR
10 –
10 –
10 –
ns
CAS hold time
t_CHR
10 –
10 –
10 –
ns
RAS to CAS precharge time
t_RPC
5
–
5
–
5
–
ns
Write to RAS precharge time
t_WRP
10 –
10 –
10 –
ns
Write hold time referenced to RAS t_WRH 10 –
10 –
10 –
ns
Semiconductor Group
8