BUZ71A Datasheet, PDF (8/9 Pages) STMicroelectronics – N - CHANNEL 50V - 0.1W - 13A TO-220 STripFET] POWER MOSFET

BUZ 71 A
Not for new design
Avalanche energy E_AS = ƒ(T_j)
parameter: I_D = 14 A, V_DD = 25 V
R_GS = 25 Ω, L = 30.6 µH
6.5
mJ
5.5
E_{AS 5.0}
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
20 40 60 80 100 120 °C 160
T_j
Drain-source breakdown voltage
V_(BR)DSS = ƒ(T_j)
Typ. gate charge
V_GS = ƒ(Q_Gate)
parameter: I_{D puls} = 22 A
16
V
V_GS
12
10
0,2 V_{DS max}
0,8 V_{DS max}
8
6
4
2
0
0 4 8 12 16 20 24 nC 30
Q_Gate
60
V
V_(BR)DSS 57
56
55
54
53
52
51
50
49
48
47
46
45
-60
-20
20
60
100 °C 160
T_j
Semiconductor Group
8
07/96