BUZ325 Datasheet, PDF (8/9 Pages) Siemens Semiconductor Group – SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

BUZ 325
Avalanche energy E_AS = ƒ(T_j)
parameter: I_D = 12.5 A, V_DD = 50 V
R_GS = 25 Ω, L = 7.5 mH
700
mJ
600
E_{AS 550}
500
450
400
350
300
250
200
150
100
50
0
20 40 60 80 100 120 °C 160
T_j
Drain-source breakdown voltage
V_(BR)DSS = ƒ(T_j)
Typ. gate charge
V_GS = ƒ(Q_Gate)
parameter: I_{D puls} = 21 A
16
V
V_GS
12
10
0,2 V_{DS max}
0,8 V_{DS max}
8
6
4
2
0
0 20 40 60 80 100 120 nC 150
Q_Gate
480
V
460
V_(BR)DSS
450
440
430
420
410
400
390
380
370
360
-60
-20
20
60
100 °C 160
T_j
Semiconductor Group
8
07/96