BUZ10 Datasheet, PDF (8/9 Pages) STMicroelectronics – N - CHANNEL 50V - 0.06W - 23A TO-220 STripFET] MOSFET

BUZ 10
Not for new design
Avalanche energy E_AS = ƒ(T_j)
parameter: I_D = 23 A, V_DD = 25 V
R_GS = 25 Ω, L = 15.1 µH
9
mJ
E_AS
7
6
5
4
3
2
1
0
20 40 60 80 100 120 °C 160
T_j
Drain-source breakdown voltage
V_(BR)DSS = ƒ(T_j)
Typ. gate charge
V_GS = ƒ(Q_Gate)
parameter: I_{D puls} = 38 A
16
V
V_GS
12
10
0,2 V_{DS max}
0,8 V_{DS max}
8
6
4
2
0
0 4 8 12 16 20 24 28 nC 34
Q_Gate
60
V
V_(BR)DSS 57
56
55
54
53
52
51
50
49
48
47
46
45
-60
-20
20
60
100 °C 160
T_j
Semiconductor Group
8
07/96