BTS425L1 Datasheet, PDF (8/12 Pages) Siemens Semiconductor Group – Smart Highside Power Switch (Overload protection Current limitation Short circuit protection Thermal shutdown)

Typ. transient thermal impedance chip case
Z_thJC = f(t_p)
Z_thJC [K/W]
10
1
D=
0.5
0.1
0.2
0.1
0.05
0.02
0.01
0
0.01
1E-5 1E-4 1E-3 1E-2 1E-1 1E0 1E1
t_p [s]
Typ. trans. thermal impedance chip to ambient air
Z_thJA = f(t_p), Device on 50mm * 50mm * 1.5mm epoxy
PCB FR4 with 6cm² (one layer, 70µm thick) copper
area for Vbb connection. PCB is vertical without blown
air.
Z_thJA [K/W]
100
10
D=
0.5
1
0.2
0.1
0.05
0.02
0.01
0
0.1
1E-5 1E-4 1E-3 1E-2 1E-1 1E0 1E1 1E2 1E3
t_p [s]
Semiconductor Group
8
BTS 425 L1