BSM25GB120DN2 Datasheet, PDF (8/9 Pages) Siemens Semiconductor Group – IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)

BSM 25 GB 120 DN2
Forward characteristics of fast recovery
reverse diode I_F = f(V_F)
parameter: T_j
50
A
I_F
40
35
30
T_j=125°C
T_j=25°C
25
20
15
10
5
0
0.0 0.5 1.0 1.5 2.0
V
3.0
V_F
Transient thermal impedance
Z_{th JC} = ^ƒ(t_p)
parameter: D = t_p / T
Diode
10 ¹
K/W
Z_{thJC 10 0}
10 ^-1
10 ^-2
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
10 ^-3
10 ^-5
10 ^-4
10 ^-3
10 ^-2
10 ^-1
t_p
s 10 ⁰
Semiconductor Group
8
Mar-29-1996