BUZ100L Datasheet, PDF (7/9 Pages) Siemens Semiconductor Group – SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level)

BUZ 100L
Typ. drain-source on-resistance
R_{DS (on)} = ƒ(I_D)
parameter: V_GS
Gate threshold voltage
V_{GS (th)} = ƒ(T_j)
parameter: V_GS = V_DS, I_D = 1 mA
0.055
a
b
c
d
4.6
Ω
V
R_DS
0.045
(on)
0.040
0.035
4.0
V_{GS(th) 3.6}
3.2
2.8
0.030
0.025
0.020
0.015
2.4
2.0
e
1.6
f
g
i
h
j
1.2
98%
typ
2%
0.010
V_GS [V] =
0.005 ^{a b c d e f}
23.05 3.5 4.0 4.5 5.0 5.5
0.000
ghi j
6.0 7.0 8.0 10.0
0
20
40
60
80
A
120
I_D
0.8
0.4
0.0
-60 -20
20
60 100 °C 180
T_j
Typ. capacitances
C = f (V_DS)
parameter:V_GS = 0V, f = 1MHz
10 ⁴
Forward characteristics of reverse diode
I_F = ƒ(V_SD)
parameter: T_j, t_p = 80 µs
10 ³
C _pF
A
I
F
C_iss
10 ²
10 ³
C_oss
C_rss
10 ²
0
5 10 15 20 25 30 V 40
V_DS
Semiconductor Group
7
10 ¹
T_j = 25 °C typ
T_j = 175 °C typ
T_j = 25 °C (98%)
T_j = 175 °C (98%)
10 ⁰
0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0
V_SD
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