BSM150GB170DN2 Datasheet, PDF (7/9 Pages) Siemens Semiconductor Group – IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)

BSM 150 GB 170 DN2
Typ. switching time
I = f (I_C) , inductive load , T_j = 125°C
par.: V_CE = 1200 V, V_GE = ± 15 V, R_G = 10 Ω
10 ⁴
Typ. switching time
t = f (R_G) , inductive load , T_j = 125°C
par.: V_CE = 1200 V, V_GE = ± 15 V, I_C = 150 A
10 ⁴
ns
t
10 ³
10 ²
tdoff
tdon
tr
tf
ns
t
10 ³
10 ²
tdoff
tdon
tr
tf
10 ¹
0
50 100 150 200 250 A 350
I_C
Typ. switching losses
E = f (I_C) , inductive load , T_j = 125°C
par.: V_CE = 1200 V, V_GE = ± 15 V, R_G = 10 Ω
400
10 ¹
0
10
20
30
40
Ω
60
R_G
Typ. switching losses
E = f (R_G) , inductive load , T_j = 125°C
par.: V_CE = 1200 V, V_GE = ± 15 V, I_C = 150 A
400
mWs
E
300
250
200
mWs
E
300
Eon
250
200
Eon
150
Eoff
100
50
0
0 50 100 150 200 250 A 350
I_C
150
100
50
0
0
Eoff
10
20
30
40
Ω
60
R_G
Semiconductor Group
7
Aug-01-1996