BFT92 Datasheet, PDF (7/7 Pages) NXP Semiconductors – PNP 5 GHz wideband transistor

BFT 92
Power Gain G_ma, G_ms = f(V_CE):_____
|S₂₁|² = f(V_CE):---------
f = Parameter
16
I_C=15mA
dB
G
12
10
8
6
0.9GHz
0.9GHz
1.8GHz
1.8GHz
4
2
0
0
2
4
6
8
Power Gain G_ma, G_ms = f(f)
V
12
V_CE
V_CE = Parameter
30
I_C=15mA
dB
G
20
15
10
10V
5
2V
1V
0
0.7
0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5
f
Intermodulation Intercept Point IP₃=f(I_C)
(3rd order, Output, Z_S=Z_L=50Ω)
V_CE = Parameter, f = 900MHz
28
dBm
24
IP₃
22
20
18
1V
16
14
12
10
8
6
4
0
4
8 12 16
Power Gain |S₂₁|²= f(f)
8V
3V
2V
20 mA 28
I_C
V_CE = Parameter
26
dB ^I_C^=15mA
22
S_{21 20}
18
16
14
12
10
8
6
4
10V
2
0
0.7V
2V
-2
0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5
f
Semiconductor Group
7
Dec-13-1996