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BFR93AW Datasheet, PDF (7/7 Pages) NXP Semiconductors – NPN 5 GHz wideband transistor
BFR 93AW
Power Gain Gma, Gms = f(VCE):_____
|S21|2 = f(VCE):---------
f = Parameter
16
IC=30mA
dB
G
12
0.9GHz
0.9GHz
10
1.8GHz
8
1.8GHz
6
4
2
0
0
2
4
6
8
Power Gain Gma, Gms = f(f)
V
12
VCE
VCE = Parameter
34
dB IC=30mA
28
G
24
20
16
12
8
10V
2V
4
1V
0
0.7V
0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5
f
Intermodulation Intercept Point IP3=f(IC)
(3rd order, Output, ZS=ZL=50Ω)
VCE = Parameter, f = 900MHz
35
dBm
IP3
25
20
5V
4V
3V
2V
15
1V
10
5
0
0
10
20
30
40 mA 60
IC
Power Gain |S21|2= f(f)
VCE = Parameter
32
IC=30mA
dB
26
S21
22
18
14
10
6
10V
2
2V
1V
-2
0.7V
0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5
f
Semiconductor Group
7
Dec-11-1996