BFR92W Datasheet, PDF (7/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA)

BFR 92W
Power Gain G_ma, G_ms = f(V_CE):_____
|S₂₁|² = f(V_CE):---------
f = Parameter
18
I_C=15mA
dB
G
14
12
10
0.9GHz
0.9GHz
1.8GHz
8
1.8GHz
6
4
2
0
0
2
4
6
8
Power Gain G_ma, G_ms = f(f)
10 V 13
V_CE
V_CE = Parameter
32
dB ^IC=15mA
26
G
22
18
14
10
10V
6
3V
1V
2
0.7V
-2
0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5
f
Intermodulation Intercept Point IP₃=f(I_C)
(3rd order, Output, Z_S=Z_L=50Ω)
V_CE = Parameter, f = 900MHz
25
IP₃ ^dBm
5V
4V
3V
15
2V
10
1V
5
0
0
5
10
15
20 mA 30
I_C
Power Gain |S₂₁|²= f(f)
V_CE = Parameter
28 _IC=15mA
dB
S₂₁
20
16
12
8
4
10V
2V
1V
0
0.7V
-4
0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5
f
Semiconductor Group
7
Dec-10-1996