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BFR92P Datasheet, PDF (7/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA)
BFR 92P
Power Gain Gma, Gms = f(VCE):_____
|S21|2 = f(VCE):---------
f = Parameter
16
IC=15mA
dB
G
12
0.9GHz
0.9GHz
10
1.8GHz
8
1.8GHz
6
4
2
0
0
2
4
6
8
Power Gain Gma, Gms = f(f)
V
12
VCE
VCE = Parameter
32
IC=15mA
dB
G
24
20
16
12
8
10V
4
1V
0
0.7V
0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5
f
Intermodulation Intercept Point IP3=f(IC)
(3rd order, Output, ZS=ZL=50Ω)
VCE = Parameter, f = 900MHz
26
dBm
IP3 22
20
18
16
14
8V
5V
3V
2V
12
10
1V
8
6
0
4
8 12 16 20 mA 28
IC
Power Gain |S21|2= f(f)
VCE = Parameter
28
dB IC=15mA
24
S21 22
20
18
16
14
12
10
8
6
4
10V
2
1V
0
-2
0.7V
0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5
f
Semiconductor Group
7
Dec-12-1996