BFR194 Datasheet, PDF (7/7 Pages) Siemens Semiconductor Group – PNP Silicon RF Transistor (For low distortion broadband amplifiers in antenna and telecommunications)

BFR 194
Power Gain G_ma, G_ms = f(V_CE):_____
|S₂₁|² = f(V_CE):---------
f = Parameter
12
I_C=70mA
dB
G
8
0.9GHz
0.9GHz
Intermodulation Intercept Point IP₃=f(I_C)
(3rd order, Output, Z_S=Z_L=50Ω)
V_CE = Parameter, f = 900MHz
40
8V
dBm
IP₃
3V
30
2V
6
1.8GHz
25
1V
4
20
2
15
0
0
2
4
6
8
Power Gain G_ma, G_ms = f(f)
V
12
V_CE
V_CE = Parameter
30
I_C=70mA
dB
G
20
15
10
5
10V
2V
0
0.7V
0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5
f
10
0 10 20 30 40 50 60 70 80 mA 100
I_C
Power Gain |S₂₁|²= f(f)
V_CE = Parameter
28
dB ^IC=70mA
22
S₂₁
18
14
10
6
2
10V
-2
2V
0.7V
-6
0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5
f
Semiconductor Group
7
Dec-13-1996