BFR183W Datasheet, PDF (7/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA)

BFR 183W
Power Gain G_ma, G_ms = f(V_CE):_____
|S₂₁|² = f(V_CE):---------
f = Parameter
19
I_C=15mA
dB
17
G 16
15
14
13
12
11
10
9
8
7
6
5
4
0
2
4
6
8
Power Gain G_ma, G_ms = f(f)
0.9GHz
0.9GHz
1.8GHz
1.8GHz
10 V 13
V_CE
V_CE = Parameter
35
I_C=15mA
dB
G
25
20
15
10
10V
1V
5
0.7V
0
0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5
f
Intermodulation Intercept Point IP₃=f(I_C)
(3rd order, Output, Z_S=Z_L=50Ω)
V_CE = Parameter, f = 900MHz
30
8V
IP₃ ^dBm
5V
3V
20
2V
15
1V
10
5
0 5 10 15 20 25 30 mA 40
I_C
Power Gain |S₂₁|²= f(f)
V_CE = Parameter
30
I_C=15mA
dB
S₂₁
20
15
10
5
10V
1V
0
0.7V
0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5
f
Semiconductor Group
7
Dec-11-1996