BFR181W Datasheet, PDF (7/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor )For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA)

BFR 181W
Power Gain G_ma, G_ms = f(V_CE):_____
|S₂₁|² = f(V_CE):---------
f = Parameter
20 _IC=5mA
dB
G ¹⁶
14
12
10
8
6
4
2
0
0
2
4
6
8
Power Gain G_ma, G_ms = f(f)
0.9GHz
0.9GHz
1.8GHz
1.8GHz
V
12
V_CE
V_CE = Parameter
30
I_C=5mA
dB
G
20
15
10
10V
1V
5
Intermodulation Intercept Point IP₃=f(I_C)
(3rd order, Output, Z_S=Z_L=50Ω)
V_CE = Parameter, f = 900MHz
22
dBm
18
IP_{3 16}
14
12
2V
10
8
1V
6
4
2
0
-2
-4
13579
Power Gain |S₂₁|²= f(f)
8V
5V
3V
11 13 mA 17
I_C
V_CE = Parameter
25
I_C=5mA
S₂₁ ^dB
15
10
10V
5
1V
0
0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5
f
0
0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5
f
Semiconductor Group
7
Dec-11-1996