BFP405 Datasheet, PDF (7/8 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low current applications For oscillators up to 12 GHz)

BFP 405
Power gain G_ma, G_ms, |S₂₁|² = f (f)
V_CE = 2V, I_C = 5mA
40
dB
32
28
G_ms
24
20
16
|S₂₁|²
12
G_ma
8
4
0
0.0
1.0
2.0
3.0
4.0 GHz
6.0
f
Power gain G_ma, G_ms = f (I_C)
V_CE = 2V
f = parameter in GHz
32
0.9
dB
1.8
24
2.4
20
3
16
4
5
12
6
8
4
0
0
2
4
6
8 10 mA 14
I_C
Power gain G_ma, G_ms = f (V_CE)
I_C = 5mA
f = parameter in V
30
GHz
0.9
24
1.8
22
2.4
3
20
18
4
16
5
14
12
6
10
8
6
4
2
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 V 4.5
V_CE
Collector-base capacitance C_cb = f (V_CB)
V_BE = 0, f = 1MHz
0.35
pF
0.25
0.20
0.15
0.10
0.05
0.00
0.0 0.5 1.0 1.5 2.0 2.5 3.0 V 4.0
V_CB
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