BFP183 Datasheet, PDF (7/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA)

BFP 183
Power Gain G_ma, G_ms = f(V_CE):_____
|S₂₁|² = f(V_CE):---------
f = Parameter
22
I_C=15mA
dB
G
18
16
14
0.9GHz
0.9GHz
1.8GHz
12
1.8GHz
10
8
6
0
2
4
6
8
Power Gain G_ma, G_ms = f(f)
V
12
V_CE
V_CE = Parameter
35
I_C=15mA
dB
G
25
20
15
10
10V
1V
0.7V
5
0
0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5
f
Intermodulation Intercept Point IP₃=f(I_C)
(3rd order, Output, Z_S=Z_L=50Ω)
V_CE = Parameter, f = 900MHz
28
dBm
IP₃ ²⁴
22
20
18
16
14
8V
5V
3V
2V
12
10
1V
8
2 6 10 14 18 22 26 30 mA 38
I_C
Power Gain |S₂₁|²= f(f)
V_CE = Parameter
30
I_C=15mA
dB
S₂₁
20
15
10
10V
5
1V
0.7V
0
0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5
f
Semiconductor Group
7
Dec-13-1996