BFP180 Datasheet, PDF (7/8 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA)

BFP 180
Power Gain G_ma, G_ms = f(V_CE):_____
|S₂₁|² = f(V_CE):---------
f = Parameter
18
I_C=1mA
dB
G
14
0.9GHz
1.8GHz
12
10
0.9GHz
8
1.8GHz
6
4
0
2
4
6
8
Power Gain G_ma, G_ms = f(f)
V
12
V_CE
V_CE = Parameter
40
I_C=1mA
dB
G
30
25
20
15
10
10V
1V
0.7V
5
0
0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5
f
Intermodulation Intercept Point IP₃=f(I_C)
(3rd order, Output, Z_S=Z_L=50Ω)
V_CE = Parameter, f = 900MHz
10
dBm
6
IP₃
4
2
0
-2
-4
-6
-8
-10
-12
-14
-16
-18
0.0
8V
5V
3V
2V
1V
1.0 2.0 3.0 4.0 mA 6.0
I_C
Power Gain |S₂₁|²= f(f)
V_CE = Parameter
10
I_C=1mA
dB
S₂₁
8
7
6
5
10V
4
1V
3
0.7V
2
1
0
0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5
f
Semiconductor Group
7
Nov-22-1996