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TLE4260 Datasheet, PDF (6/14 Pages) Siemens Semiconductor Group – 5-V Low-Drop Voltage Regulator
TLE 4260
Characteristics
VI = 13.5 V; Tj = 25 °C; (unless otherwise specified)
Parameter
Symbol Limit Values
Unit Test Condition
min. typ. max.
Normal Operation
Output voltage
VQ
Short -circuit current
ISC
Current consumption
Iq
Iq = II – IQ
Current consumption
Iq
Iq = II – IQ
Current consumption
Iq
Iq = II – IQ
Drop voltage
VDR
Drop voltage
VDR
Load regulation
∆VQ
Supply-voltage regulation ∆VQ
Supply-voltage regulation ∆VQ
Ripple rejection
SVR
Temperature drift of
αVQ
output voltage1)
4.75
500
–
–
–
–
–
–
–
–
–
–
5.0 5.25
1000 –
8.5 10
50 65
– 80
0.35 0.5
0.2 0.3
15 35
15 50
5 25
54 –
2× –
10–4
V 25 mA ≤ IQ ≤ 500 mA
6 V ≤ VI ≤ 28 V
– 40 °C ≤ Tj ≤ 125 °C
mA VI =17 V to 28 V;
VQ = 0 V
mA1) 6 V ≤ VI ≤ 28 V
IQ = 150 mA
mA1) 6 V ≤ VI ≤ 28 V
IQ = 500 mA
mA1) VI ≤ 6 V
IQ = 500 mA
V VI = 4.5 V; IQ = 0.5 A
V VI = 4.5 V; IQ = 0.15 A
mV 25 mA ≤ IQ ≤ 500 mA
mV VI ≤ 6 V to 28 V;
IQ = 100 mA
mV VI ≤ 6 V to 16 V;
IQ = 100 mA
dB f = 100 Hz;
Vr = 0.5 Vpp
1/°C –
Standby Operation
Quiscent current;
Iq
Iq = II – IQ
Quiscent current;
Iq
Iq = II – IQ
–
500 700 µA 10 V ≤ VI ≤ 16 V;
IQ = 0 mA
–
750 850 µA 10 V ≤ VI ≤ 16 V;
IQ = 5 mA
Semiconductor Group
6
1998-11-01