HYM72V4000GS-50- Datasheet, PDF (6/11 Pages) Siemens Semiconductor Group – 4M x 72-Bit Dynamic RAM Module

HYM72V4000/10GS-50/-60
4M x 72-ECC Module
Parameter
Symbol Limit Values
min. max.
Average V_CC supply current during RAS
I_CC3
only refresh cycles:
-50 version
–
-60 version
–
1800
1620
Unit Test
Condition
2)4)
mA
mA
(RAS cycling, CAS = V_IH , t_RC = t_RC min.)
Average V_CC supply current during fast
I_CC4
page mode:
-50 version
–
-60 version
–
–
(RAS = V_IL, CAS, address cycling
t_PC = t_PC min.)
Standby V_CC supply current
(RAS = CAS = V_CC – 0.2 V,
one address change within 15,6 µs trc)
I_CC5
–
Average V_CC supply current during
I_CC6
CAS-before-RAS refresh mode:
-50 version
–
-60 version
–
720
mA 2)3)4)
630
mA
30
mA –
1800
1620
mA 2)4)
mA
(RAS, CAS cycling, t_RC = t_RC min.)
Capacitance
T_A = 0 to 70 °C; V_CC = 3.3 V ± 0.3V; f = 1 MHz
Parameter
Input capacitance (A0 to A11,B0)
Input capacitance (RAS0, RAS2)
Input capacitance (CAS0-CAS7)
Input capacitance (WE0,WE2,OE0,OE2)
I/O capacitance (DQ0-DQ71)
Symbol
C_I1
C_I2
C_I3
C_I4
C_IO1
Limit Values
min.
max.
–
10
–
50
–
15
–
15
–
15
Unit
pF
pF
pF
pF
pF
Semiconductor Group
6