HYM324020S Datasheet, PDF (6/9 Pages) Siemens Semiconductor Group – 4M x 32-Bit Dynamic RAM Module

HYM 324020S/GS-60/-70
4M x 32-Bit
DC Characteristics¹⁾ (cont’d)
Parameter
Average V_CC supply current
during fast page mode
(RAS = V_IL, CAS, address cycling,
t_PC = t_PC min)
Symbol
I_CC4
Limit Values
min.
max.
60 ns - Version
70 ns - Version
–
640
–
560
Standby V_CC supply current
(RAS = CAS = V_CC – 0.2 V)
I_CC5
–
8
Average V_CC supply current
I_CC6
during CAS-before-RAS refresh mode
(RAS, CAS cycling, t_RC = t_RC min)
60 ns - Version
70 ns - Version
–
880
–
800
Unit Test
Condition
mA ²⁾
mA ³⁾
mA
2)
mA
mA
Capacitance
T_A = 0 to 70 ˚C, V_CC = 5 V ± 10 %, f = 1 MHz
Parameter
Input capacitance (A0 to A10,WE)
Input capacitance (RAS0, RAS2)
Input capacitance (CAS0 - CAS3)
I/O capacitance
(DQ0-DQ31)
Symbol
C_I1
C_I2
C_I3
C_IO
Limit Values
min.
max.
–
90
–
45
–
40
–
25
Unit
pF
pF
pF
pF
Semiconductor Group
576