BUZ74A Datasheet, PDF (6/9 Pages) Siemens Semiconductor Group – SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

BUZ 74 A
Typ. output characteristics
I_D = ƒ(V_DS)
parameter: t_p = 80 µs
5.0
P_tot = 40W_l
A
kj i h g ^f
I_D
4.0
3.5
3.0
2.5
2.0
1.5
1.0
e
V_GS [V]
a
4.0
b
4.5
c
5.0
d
5.5
d
e
6.0
f
6.5
g
7.0
h
7.5
i
8.0
c
j
9.0
k 10.0
l
20.0
b
0.5
0.0
0
a
10
20
30
40 V 55
V_DS
Typ. transfer characteristics I_D = f (V_GS)
parameter: t_p = 80 µs
V_DS≥2 x I_D x R_DS(on)max
4.5
A
I_D
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0 1 2 3 4 5 6 7 8 V 10
V_GS
Typ. drain-source on-resistance
R_{DS (on)} = ƒ(I_D)
parameter: V_GS
13
Ω
11
R_{DS (on) 10}
a
b
9
8
7
c
6
d
5
e
4
gf
ih
3
j
2 _{VGS [V] =}
1
abcdef
45.05 5.5 6.0 6.5 7.0 7.5
0
ghi j
8.0 9.0 10.0 20.0
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 A 3.6
I_D
Typ. forward transconductance g_fs = f (I_D)
parameter: t_p = 80 µs,
V_DS≥2 x I_D x R_DS(on)max
4.0
S
g_fs
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 A 4.0
I_D
Semiconductor Group
6
07/96