BUZ41A Datasheet, PDF (6/9 Pages) Siemens Semiconductor Group – SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

BUZ 41 A
Typ. output characteristics
I_D = ƒ(V_DS)
parameter: t_p = 80 µs
l
10
P_tot = 75W
k
j ^ihg _{f e}
A
I_D
8
7
6
5
4
3
2
d
V_GS [V]
a 4.0
b 4.5
c 5.0
d 5.5
e 6.0
f 6.5
c g 7.0
h 7.5
i 8.0
j 9.0
k 10.0
l 20.0
b
1
a
0
0 4 8 12 16 20 24 28 32 V 38
V_DS
Typ. transfer characteristics I_D = f (V_GS)
parameter: t_p = 80 µs
V_DS≥2 x I_D x R_DS(on)max
7.5
A
6.5
I_D
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0 1 2 3 4 5 6 7 8 V 10
V_GS
Typ. drain-source on-resistance
R_{DS (on)} = ƒ(I_D)
parameter: V_GS
5.0
Ω
a
b
c
R_{DS (on)} ^4.0
3.5
3.0
2.5
2.0
d
e
1.5
f
h
j
i
g
k
1.0
V_GS [V] =
0.5 a b c d e f
4.05 5.0 5.5 6.0 6.5 7.0
0.0
012345
ghi j k
7.5 8.0 9.0 10.0 20.0
6 7 8 A 10
I_D
Typ. forward transconductance g_fs = f (I_D)
parameter: t_p = 80 µs,
V_DS≥2 x I_D x R_DS(on)max
8.0
S
g_fs
6.0
5.0
4.0
3.0
2.0
1.0
0.0
0.0 1.0 2.0 3.0 4.0 5.0
A 7.0
I_D
Semiconductor Group
6
07/96