BUZ384 Datasheet, PDF (6/9 Pages) Siemens Semiconductor Group – SIPMOS Power Transistor (N channel Enhancement mode FREDFET)

BUZ 384
Typ. output characteristics
I_D = ƒ(V_DS)
parameter: t_p = 80 µs
24
P_tot = 125W
A
l
kj _{i h g}
20
I_D
18
16
14
12
10
8
6
4
f ^VGS ^[V]
a 4.0
b 4.5
e c 5.0
d 5.5
e 6.0
f 6.5
d _{g 7.0}
h 7.5
i 8.0
c _{j 9.0}
k 10.0
l 20.0
b
2
a
0
0 4 8 12 16 20 24 V 30
V_DS
Typ. transfer characteristics I_D = f (V_GS)
parameter: t_p = 80 µs
V_DS≥2 x I_D x R_DS(on)max
18
A
I_D
14
12
10
8
6
4
2
0
0 1 2 3 4 5 6 7 8 V 10
V_GS
Typ. drain-source on-resistance
R_{DS (on)} = ƒ(I_D)
parameter: V_GS
1.8 _{a b}
Ω
R_{DS (on) 1.4}
c
d
e
f
1.2
1.0
0.8
g
h
i
0.6
kj
l
0.4
0.2
V_GS [V] =
ab
c
4.0 4.5 5.0
0.0
0
4
def g
5.5 6.0 6.5 7.0
8
12
hi
7.5 8.0
16
j kl
9.0 10.0 20.0
A 22
I_D
Typ. forward transconductance g_fs = f (I_D)
parameter: t_p = 80 µs,
V_DS≥2 x I_D x R_DS(on)max
10
S
g_fs
8
7
6
5
4
3
2
1
0
0 2 4 6 8 10 12 A 16
I_D
Semiconductor Group
6
07/96