BUZ103SL Datasheet, PDF (6/8 Pages) Siemens Semiconductor Group – SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated)

BUZ 103 SL
SPP28N05L
Typ. output characteristics
I_D = ƒ(V_DS)
parameter: t_p = 80 µs , T_j = 25 °C
65
P_tot = 75W
A
l ^{k ji} h g
55
I_D
50
45
40
35
30
25
20
15
V_GS [V]
a
2.5
f_b
3.0
c
3.5
d
4.0
ee
4.5
f
5.0
g
5.5
d^h
6.0
i
6.5
j
7.0
k
8.0
c
l
10.0
10
b
5
0
a
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0
V_DS
Typ. transfer characteristics I_D = f (V_GS)
parameter: t_p = 80 µs
V_DS≥2 x I_D x R_DS(on)max
60
A
50
I
D
45
40
35
30
25
20
15
10
5
0
0 1 2 3 4 5 6 7 8 V 10
V_GS
Typ. drain-source on-resistance
R_{DS (on)} = ƒ(I_D)
parameter: t_p = 80 µs, T_j = 25 °C
0.16
a
b
c
d
e
Ω
R_{DS (on)}
0.12
0.10
0.08
0.06
0.04
0.02 ^VGS ^{[V] =}
abc
32.05 3.5 4.0
0.00
0
10
def g
4.5 5.0 5.5 6.0
20
30
hi
6.5 7.0
40
f
g
h
j
i
k
jk
8.0 10.0
A 55
I_D
Semiconductor Group
6
30/Jan/1998