BUP302 Datasheet, PDF (6/7 Pages) Siemens Semiconductor Group – IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated)

BUP 302
Typ. gate charge
V_GE = ƒ(Q_Gate)
parameter: I_{C puls} = 6 A
Typ. capacitances
C = f (V_CE)
parameter: V_GE = 0 V, f = 1 MHz
20
V
V_GE ¹⁶
14
400 V
800 V
12
10
8
6
4
2
0
0
10 20 30 40 50 nC 65
Q_Gate
Typ. switching time
t = f (R_G), inductive load, T_j = 125 °C
parameter: V_CE = 600 V, V_GE = ± 15 V, I_C = 5 A
Semiconductor Group
6
Jul-30-1996