BTS550P Datasheet, PDF (6/15 Pages) Siemens Semiconductor Group – Smart Highside High Current Power Switch (Overload protection Current limitation Short circuit protection Overtemperature protection)

Parameter and Conditions
at Tj = -40 ... +150 °C, V_bb = 12 V unless otherwise specified
Preliminary Data Sheet BTS550P
Symbol
Values
Unit
min typ max
Truth Table
Normal
operation
Very high
load current
Current-
limitation
Short circuit to
GND
Over-
temperature
Short circuit to
V_bb
Open load
Negative output
voltage clamp
Inverse load
current
Input
current
level
L
H
H
H
L
H
L
H
L
H
L
H
L
L
H
Output
level
L
H
H
H
L
L
L
L
H
H
Z²¹)
H
L
H
H
Current
Sense
IIS
0
nominal
I_{IS, lim}
0
0
0
0
0
0
<nominal ²⁰⁾
0
0
0
Remark
=I_L / k_ilis, up to I_IS=I_IS,lim
up to V_ON=V_{ON(Fold back)}
I_IS no longer proportional to I_L
V_ON > V_{ON(Fold back)}
if V_ON>V_ON(SC), shutdown will occure
0
0
L = "Low" Level
H = "High" Level
Overtemperature reset by cooling: Tj < Tjt (see diagram on page 14)
Short circuit to GND: Shutdown remains latched until next reset via input (see diagram on page 13)
Terms
I _bb
V_bIN
3
Vbb
IL
Vbb
IN
OUT
2
PROFET
1,5
R_IN
IS
V
IN
V_bIS
4 _IIS
I _IN
D_S
V_IS
R_IS
R_ON measurement layout
V_ON
≤ 5.5 mm
V_OUT
Vbb force contacts
Out Force Sense
contacts ^contacts
(both out
pins parallel)
Two or more devices can easily be connected in
parallel to increase load current capability.
20) _{Low ohmic short to Vbb may reduce the output current IL and can thus be detected via the sense current IIS.}
21) _{Power Transistor "OFF", potential defined by external impedance.}
Semiconductor Group
Page 6
1998-Aug-31